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Effect of chemical treatments on nm-scale electrical characteristics of polycrystalline thin film Cu(In,Ga)Se2 surfaces

Identifieur interne : 000156 ( Main/Repository ); précédent : 000155; suivant : 000157

Effect of chemical treatments on nm-scale electrical characteristics of polycrystalline thin film Cu(In,Ga)Se2 surfaces

Auteurs : RBID : Pascal:14-0027492

Descripteurs français

Pascal (Inist)
- Traitement chimique, Caractéristique électrique, Polycristal, Microscopie force atomique, Attaque chimique, Oxydation, Sulfuration, Joint grain, Courant photoélectrique, Semiconducteur type p, Borne électrique, Activité électrique, Dépôt bain chimique, Système tampon, Chimie surface, Cellule solaire, Traitement surface, Addition sélénium, Couche mince, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Composé quaternaire, Semiconducteur type n, Sulfure de cadmium, Cu(In,Ga)Se2, CdS.

English descriptors

KwdEn :
- Atomic force microscopy, Buffer system, Cadmium sulfide, Chemical bath deposition, Chemical etching, Chemical treatment, Copper selenides, Electrical activity, Electrical characteristic, Gallium selenides, Grain boundary, Indium selenides, Oxidation, Photoelectric current, Polycrystal, Quaternary compound, Selenium addition, Solar cell, Sulfurization, Surface chemistry, Surface treatment, Termination, Thin film, n type semiconductor, p type semiconductor.

Abstract

Conducting Probe AFM. CP-AFM, was used to follow how chemical etching, oxidation, and sulfurization affect the surface nanoscale electrical characteristics of polycrystalline Cu(In,Ga)Se₂ (CIGS) thin films. Band bending at grain boundaries (GBs) on the surface was studied and analyzed by CP-AFM - measured photocurrents. We find that both oxidation and sulfurization can passivate the GBs of the CIGS films; oxidation increases n-type band bending, which impedes the transport of photogenerated electrons, while sulfurization increases p-type band bending at GBs, which helps this transport. Differences in effects between surface terminations by sulfide, selenide and oxide were analyzed. The effects of these treatments on the electrical activity of the GBs of the films, as well as the importance of the use of chemical bath deposition of the CdS buffer, are explained within a defect surface chemistry model.

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Pascal:14-0027492

Le document en format XML

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<country>Israël</country>
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<author><name sortKey="Cohen, Sidney R" uniqKey="Cohen S">Sidney R. Cohen</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Chemical Research Support, Weizmann Institute of Science</s1>
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<author><name sortKey="Cahen, David" uniqKey="Cahen D">David Cahen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials and Interfaces, Weizmann Institute of Science</s1>
<s2>Rehovot</s2>
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<term>Chemical etching</term>
<term>Chemical treatment</term>
<term>Copper selenides</term>
<term>Electrical activity</term>
<term>Electrical characteristic</term>
<term>Gallium selenides</term>
<term>Grain boundary</term>
<term>Indium selenides</term>
<term>Oxidation</term>
<term>Photoelectric current</term>
<term>Polycrystal</term>
<term>Quaternary compound</term>
<term>Selenium addition</term>
<term>Solar cell</term>
<term>Sulfurization</term>
<term>Surface chemistry</term>
<term>Surface treatment</term>
<term>Termination</term>
<term>Thin film</term>
<term>n type semiconductor</term>
<term>p type semiconductor</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Traitement chimique</term>
<term>Caractéristique électrique</term>
<term>Polycristal</term>
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<term>Attaque chimique</term>
<term>Oxydation</term>
<term>Sulfuration</term>
<term>Joint grain</term>
<term>Courant photoélectrique</term>
<term>Semiconducteur type p</term>
<term>Borne électrique</term>
<term>Activité électrique</term>
<term>Dépôt bain chimique</term>
<term>Système tampon</term>
<term>Chimie surface</term>
<term>Cellule solaire</term>
<term>Traitement surface</term>
<term>Addition sélénium</term>
<term>Couche mince</term>
<term>Séléniure de cuivre</term>
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<term>Semiconducteur type n</term>
<term>Sulfure de cadmium</term>
<term>Cu(In,Ga)Se2</term>
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<front><div type="abstract" xml:lang="en">Conducting Probe AFM. CP-AFM, was used to follow how chemical etching, oxidation, and sulfurization affect the surface nanoscale electrical characteristics of polycrystalline Cu(In,Ga)Se<sub>2</sub>
 (CIGS) thin films. Band bending at grain boundaries (GBs) on the surface was studied and analyzed by CP-AFM - measured photocurrents. We find that both oxidation and sulfurization can passivate the GBs of the CIGS films; oxidation increases n-type band bending, which impedes the transport of photogenerated electrons, while sulfurization increases p-type band bending at GBs, which helps this transport. Differences in effects between surface terminations by sulfide, selenide and oxide were analyzed. The effects of these treatments on the electrical activity of the GBs of the films, as well as the importance of the use of chemical bath deposition of the CdS buffer, are explained within a defect surface chemistry model.</div>
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<fC01 i1="01" l="ENG"><s0>Conducting Probe AFM. CP-AFM, was used to follow how chemical etching, oxidation, and sulfurization affect the surface nanoscale electrical characteristics of polycrystalline Cu(In,Ga)Se<sub>2</sub>
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Effect of chemical treatments on nm-scale electrical characteristics of polycrystalline thin film Cu(In,Ga)Se2 surfaces

Effect of chemical treatments on nm-scale electrical characteristics of polycrystalline thin film Cu(In,Ga)Se2 surfaces

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Abstract

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